WebFeb 1, 2015 · Previously, the gate electrode was made out of degenerately doped polycrystalline silicon (poly-Si). This is stable at high temperatures and compatible with SiO 2 Å. This depletion effect is removed by replacing poly-Si with a normal metal. The effect on ECT of the replacement of SiO 2 by a high K oxide and poly-Si gate electrode by a metal is ... WebMar 1, 2012 · Tungsten dual poly metal gate stacks containing different diffusion barriers were fabricated using sub-100 nm DRAM process technologies.As in our previous report …
Low resistive tungsten dual poly-metal gates with multi-diffusion ...
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Lecture #23 - University of California, Berkeley
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